[PS-3-3] RF Characteristics of Poly-Si TFTs with HfO₂ Gate Dielectric Fabricated by Microwave Annealing

J. J. Tsai¹, ^○H. H. Hu¹ (1.National Taipei Univ. of Tech.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-3-3