[PS-3-6] Comparison of Gate Structures of P-channel Poly-Si Nanowire Trench Ultra-thin Channel Juntionless Field-Effect Transistors

^○Y. C. Wu¹, K. W. Lin¹, M. S. Yeh¹, Y. R. Lin¹, M. H. Wu¹, Y. H. Lin² (1.National Tsing Hua Univ., 2.National United Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-3-6