[PS-4-2] Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beam and Its Mechanism Investigated by First-Principles Calculation

^○T. Kubota¹, Y. Kikuchi^1,2, T. Nozawa², S. Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.WPI-AIMR, Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-4-2