The Japan Society of Applied Physics

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

T. Matsuzaki1, T. Onuki1, S. Nagatsuka1, H. Inoue1, T. Ishizu1, Y. Ieda1, N. Yamade1, H. Miyairi1, M. Sakakura1, Y. Shionoiri1, K. Kato1, T. Okuda1, KoyamaJ. 1, Y. Yamamoto1, S. Yamazaki1 (1.Semiconductor Energy Lab. Corp., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-4-3