A 16-Level-Cell Memory with 0.24mV/&#176;C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

T. Matsuzaki

doi:https://doi.org/10.7567/SSDM.2015.PS-4-3

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

^○T. Matsuzaki¹, T. Onuki¹, S. Nagatsuka¹, H. Inoue¹, T. Ishizu¹, Y. Ieda¹, N. Yamade¹, H. Miyairi¹, M. Sakakura¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, KoyamaJ. ¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-4-3

2015 International Conference on Solid State Devices and Materials

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET