[PS-6-17] Preparation of InAs Surface by Hydrogen Plasma Pre-Treatment for Low Interfacial Trap Density MOS Capacitors

^○C. Y. Chen¹, C. H. Hsieh¹, W. J. Hsueh¹, J. I. Chyi^1,2 (1.National Central Univ., 2.Academia Sinica(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-17