The Japan Society of Applied Physics

[PS-6-2] Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator for High Power Application

Y. X. Huang1, W. C. Shih1, T. W. Lin1, C. H. Wu1, Y. C. Lin1, J. S. Maa1, E. Y. Chang1, K. Kakushima2, H. Iwai2 (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-6-2