Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

N. Ozaki

doi:https://doi.org/10.7567/SSDM.2015.PS-7-7

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

[PS-7-7] Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

^○N. Ozaki^1,2, T. Yasuda¹, H. Shibata¹, H. Ohsato³, E. Watanabe³, N. Ikeda³, Y. Sugimoto³, D. T. D. Childs², R. A. Hogg² (1.Wakayama Univ., 2.Univ. of Sheffield, 3.NIMS(Japan))

https://doi.org/10.7567/SSDM.2015.PS-7-7

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