[PS-1-4] Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using Plasma Enhanced Atomic Layer Deposition

^○S. K. Eom¹, R. S. Ki¹, D. H. Kim¹, H. Y. Cha², K. S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ.(Korea))