Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs

S. Yang

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-2-10] Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs

^○S. Yang¹, W. Cheng¹, H. Wu¹, C. Song^1,2, W. Zhang^1,2 (1.National Center for Advanced Packaging Co., LTD., 2.Inst. of Microelectronics, Chinease Academy of Sci.(China))

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