[PS-6-12] High-Quality PECVD SiO2 Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOS-HFETs ○H. S. Kim1, J. G. Lee2, S. H. Park1, S. W. Han1, K. S. Seo3, H. Y. Cha1 (1.Hongik Univ., 2.Univ. of Texas at Dallas, 3.Seoul National Univ.(Korea))
