Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High Indium Composition

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

^○K. Tsutsui¹, D. Matsubayashi¹, N. Ishihara¹, T. Takasu¹, S. Matsuda¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co., Ltd.(Japan))