[PS-7-6] Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection InGaAsP Photonic Devices

^○J. K. Park^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))