Photoconductivity with 1.55 &#956;m Excitation of InAs QDs Embedded in InGaAs Barriers on GaAs Substrate

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

^○K. Murakumo¹, Y. Yamaoka¹, N. Kumagai¹, T. Kitada¹, T. Isu¹ (1.Tokushima Univ.(Japan))