Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation

N. Matsuo

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

[PS-9-5] Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation

^○N. Matsuo¹, S. Nakamura¹, T. Takada¹, A. Heya¹, K. Yamana¹, T. Sato², S. Yokoyama², Y. Omura³ (1.Univ. of Hyogo, 2.Hiroshima Univ., 3.Kansai Univ.(Japan))

▲