2:00 PM - 2:30 PM

[A-1-02(Invited)] Stackable MoS₂ FinFETs Using Solid CVD Developed Through Fully CMOS-Compatible Process Technology

^○M. Chen¹, K. Li¹, L. Li², M. Li^2,3, Y. Chang⁴, C. Lin¹, Y. Chen¹, C. Chen¹, B. Wu¹, C. Wu¹, Y. Lee¹, J. Shieh¹, W. Yeh¹, P. Su⁵, T. Wang⁵, F. Yang³, C. Hu⁶ (1.National Nano Device Labs.(Taiwan), 2.King Abdullah Univ. of Sci. and Technology(Saudi Arabia), 3.Academia Sinica(Taiwan), 4.NCTU(Taiwan), 5.Dept. of Electronics Eng., NCTU(Taiwan), 6.Univ. of California, Berkeley(USA))

https://doi.org/10.7567/SSDM.2016.A-1-02