The Japan Society of Applied Physics

14:00 〜 14:30

[A-1-02(Invited)] Stackable MoS2 FinFETs Using Solid CVD Developed Through Fully CMOS-Compatible Process Technology

M. Chen1, K. Li1, L. Li2, M. Li2,3, Y. Chang4, C. Lin1, Y. Chen1, C. Chen1, B. Wu1, C. Wu1, Y. Lee1, J. Shieh1, W. Yeh1, P. Su5, T. Wang5, F. Yang3, C. Hu6 (1.National Nano Device Labs.(Taiwan), 2.King Abdullah Univ. of Sci. and Technology(Saudi Arabia), 3.Academia Sinica(Taiwan), 4.NCTU(Taiwan), 5.Dept. of Electronics Eng., NCTU(Taiwan), 6.Univ. of California, Berkeley(USA))

https://doi.org/10.7567/SSDM.2016.A-1-02