16:10 〜 16:30

[A-2-02] Advantages of Silicon-on-Insulator FETs over FinFETs in Steep Subthreshold Swing Operation in Ferroelectric Gate FETs

^○H. Ota¹, S. Migita¹, J. Hattori¹, K. Fukuda¹, A. Toriumi² (1.AIST(Japan), 2.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.A-2-02