4:50 PM - 5:10 PM

[A-2-04] Effects of Impurity and Composition Profile Steepness on Electrical Characteristics of GaAsSb/InGaAs Hetero-junction Vertical TFETs

^○T. Gotow^1,3, M. Mitsuhara^2,3, T. Hoshi^2,3, H. Sugiyama^2,3, M. Takenaka^1,3, S. Takagi^1,3 (1.Univ. of Tokyo(Japan), 2.NTT Device Tech. Labs.(Japan), 3.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2016.A-2-04