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[A-2-05] InGaAs/Si Heterojunction Tunnel FET with Modulation-doped Channel

^○K. Tomioka^1,2, F. Ishizaka¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ.(Japan), 2.JST-PRESTO(Japan))

https://doi.org/10.7567/SSDM.2016.A-2-05