17:10 〜 17:30

[A-2-05] InGaAs/Si Heterojunction Tunnel FET with Modulation-doped Channel

^○K. Tomioka^1,2, F. Ishizaka¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ.(Japan), 2.JST-PRESTO(Japan))

https://doi.org/10.7567/SSDM.2016.A-2-05