On the Drain Bias Dependence of Tunnel FETs

K. Fukuda

doi:https://doi.org/10.7567/SSDM.2016.A-3-03

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

10:20 AM - 10:40 AM

[A-3-03] On the Drain Bias Dependence of Tunnel FETs

^○K. Fukuda¹, T. Mori¹, H. Asai¹, J. Hattori¹, W. Mizubayashi¹, Y. Morita¹, H. Fuketa¹, S. Migita¹, H. Ota¹, M. Masahara¹, K. Endo¹, T. Matsukawa¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2016.A-3-03

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