InGaAs-on-Si(Ge) 3D Monolithic Integration for CMOS and More-than-Moore Technologies

V. V. Deshpande

doi:https://doi.org/10.7567/SSDM.2016.A-4-01

13:30 〜 14:00

[A-4-01(Invited)] InGaAs-on-Si(Ge) 3D Monolithic Integration for CMOS and More-than-Moore Technologies

^○V. V. Deshpande¹, V. Djara¹, T. Morf¹, P. Hashemi², E. O'Connor¹, K. Balakrishnan², D. Caimi¹, M. Sousa¹, J. Fompeyrine¹, L. Czornomaz¹ (1.IBM Research GmbH(Switzerland), 2.IBM T.J. Watson Research Center(USA))

https://doi.org/10.7567/SSDM.2016.A-4-01

2016 International Conference on Solid State Devices and Materials

[A-4-01(Invited)] InGaAs-on-Si(Ge) 3D Monolithic Integration for CMOS and More-than-Moore Technologies