Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique

X. Gong

doi:https://doi.org/10.7567/SSDM.2016.A-5-01

09:30 〜 10:00

[A-5-01(Invited)] Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique

^○X. Gong¹, S. Yadav¹, K. Goh¹, K. Tan², A. Kumar¹, K. Low¹, B. Jia², S. Yoon², G. Liang¹, Y. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Nanyang Technological Univ.(Singapore))

https://doi.org/10.7567/SSDM.2016.A-5-01

2016 International Conference on Solid State Devices and Materials

[A-5-01(Invited)] Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique