10:40 〜 11:00

[A-5-04] On the Characterization of Hot Carrier Effect in Fully Depleted SOI and GeOI MOSFETs under Circuit-Speed Random Stress

^○R. Cheng¹, W. Chen¹, D. -W. Wang¹, J. Lu², R. Zhang¹, W. -Y. Yin¹, Y. Zhao¹ (1.Zhejiang Univ.(China), 2.Hunan Univ.(China))

https://doi.org/10.7567/SSDM.2016.A-5-04