The Japan Society of Applied Physics

10:40 〜 11:00

[A-5-04] On the Characterization of Hot Carrier Effect in Fully Depleted SOI and GeOI MOSFETs under Circuit-Speed Random Stress

R. Cheng1, W. Chen1, D. -W. Wang1, J. Lu2, R. Zhang1, W. -Y. Yin1, Y. Zhao1 (1.Zhejiang Univ.(China), 2.Hunan Univ.(China))

https://doi.org/10.7567/SSDM.2016.A-5-04