On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement

T. Mori

doi:https://doi.org/10.7567/SSDM.2016.A-7-01

2:00 PM - 2:20 PM

[A-7-01] On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement

^○T. Mori¹, S. Migita¹, K. Fukuda¹, H. Asai¹, Y. Morita¹, W. Mizubayashi¹, Y. Liu¹, S. O'uchi¹, H. Fuketa¹, S. Otsuka¹, T. Yasuda¹, M. Masahara¹, H. Ota¹, T. Matsukawa¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2016.A-7-01

2016 International Conference on Solid State Devices and Materials

[A-7-01] On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement