A Sidewall Electrode TiOx/TiOxNy ReRAM with Excellent Memory Window Control and Reliability Using Plasma Oxidation and a Novel Degradation-detecting Writing Algorithm

D. Lee

doi:https://doi.org/10.7567/SSDM.2016.B-1-03

14:20 〜 14:40

[B-1-03] A Sidewall Electrode TiOx/TiOxNy ReRAM with Excellent Memory Window Control and Reliability Using Plasma Oxidation and a Novel Degradation-detecting Writing Algorithm

^○D. Lee¹, J. Wu¹, M. Lee¹, E. Lai¹, W. Khwa¹, Y. Lin¹, W. Chen¹, K. Chiang¹, T. Wang¹, S. Horng², J. Gong², H. Lung¹, K. Hsieh¹, C. Lu¹ (1.Macronix International Co., Ltd.(Taiwan), 2.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.B-1-03

2016 International Conference on Solid State Devices and Materials

[B-1-03] A Sidewall Electrode TiOx/TiOxNy ReRAM with Excellent Memory Window Control and Reliability Using Plasma Oxidation and a Novel Degradation-detecting Writing Algorithm