9:10 AM - 9:30 AM

[B-3-01] A Physics-Based Compact Model of Resistive Switching for Bi-layered TaO_X-RRAM

^○Y. D. Zhao¹, P. Huang¹, J. J. Hu¹, X. Y. Liu¹, J. F. Kang¹ (1.Peking Univ.(China))

https://doi.org/10.7567/SSDM.2016.B-3-01