The Japan Society of Applied Physics

10:30 AM - 10:50 AM

[B-3-05] Multi-level Operation of a High-speed, Low Power Topological Switching Random-access Memory (TRAM) Based on a Ge Deficient GexTe/Sb2Te3 Superlattice

H. Shirakawa1, M. Takato1, M. Araidai1,2, T. Ohyanagi3, N. Takaura3, K. Shiraishi1 (1.Nagoya Univ.(Japan), 2.JST-CREST(Japan), 3.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.B-3-05