13:50 〜 14:10

[B-4-02] 3.3V Write-voltage Ir/Ca_0.2Sr_0.8Bi₂Ta₂O₉/HfO₂/Si Ferroelectric-gate Field-effect Transistors with 10⁹ Endurance and Good Retention

^○W. Zhang^1,2, M. Takahashi¹, Y. Sasaki², M. Kusuhara², S. Sakai¹ (1.AIST(Japan), 2.WACOM R&D Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.B-4-02