09:30 〜 10:00

[B-5-01(Invited)] Technology Challenges for Future DRAM and NAND and Technology Break through with Emerging Memories, MRAM and PRAM

^○J. C. Park¹, J. K. Kim¹, K. H. Yoon¹, K. S. Shin¹ (1.Samsung Electronics Co., Ltd.(Korea))

https://doi.org/10.7567/SSDM.2016.B-5-01