11:35 AM - 11:55 AM

[B-6-02] N₂O-Treated Crystalline ZrTiO₄ as Charge Trapping Layer for Flash Memory Applications Featuring Low Operation Voltage

^○Y. S. Shen¹, K. Y. Chen¹, P. C. Chen¹, Y. H. Wu¹ (1.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.B-6-02