11:35 〜 11:55
[B-6-02] N2O-Treated Crystalline ZrTiO4 as Charge Trapping Layer for Flash Memory Applications Featuring Low Operation Voltage
○Y. S. Shen1, K. Y. Chen1, P. C. Chen1, Y. H. Wu1
(1.National Tsing Hua Univ.(Taiwan))
https://doi.org/10.7567/SSDM.2016.B-6-02