Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry

Y. Shimazaki

doi:https://doi.org/10.7567/SSDM.2016.D-1-04

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

2:30 PM - 3:00 PM

[D-1-04(Invited)] Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry

^○Y. Shimazaki¹, M. Yamamoto^1,2, I. V. Borzenets¹, K. Watanabe³, T. Taniguchi³, S. Tarucha^1,4 (1.Univ. of Tokyo(Japan), 2.JST-PRESTO(Japan), 3.NIMS(Japan), 4.RIKEN(Japan))

https://doi.org/10.7567/SSDM.2016.D-1-04

▲