Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry

Y. Shimazaki

doi:https://doi.org/10.7567/SSDM.2016.D-1-04

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

14:30 〜 15:00

[D-1-04(Invited)] Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry

^○Y. Shimazaki¹, M. Yamamoto^1,2, I. V. Borzenets¹, K. Watanabe³, T. Taniguchi³, S. Tarucha^1,4 (1.Univ. of Tokyo(Japan), 2.JST-PRESTO(Japan), 3.NIMS(Japan), 4.RIKEN(Japan))

https://doi.org/10.7567/SSDM.2016.D-1-04

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