16:10 〜 16:25

[D-2-02] Suspended Ge Gate-All-Around Nanowire FETs with Selective Etching Technique

^○C. -C. Wan^1,2, C. -J. Su², S. -H. Hsu², G. -L. Luo², T. -H. Hou¹, W. -F. Wu², W. -K. Yeh² (1.NCTU(Taiwan), 2.National Nano Device Labs.(Taiwan))

https://doi.org/10.7567/SSDM.2016.D-2-02