14:15 〜 14:30

[E-1-03] Impacts on 4H-SiC MOSFET Mobility of High Temperatue Annealing in Oxidizing Or Inert Ambient before Gate Oxide Growth

^○H. Hirai¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2016.E-1-03