The Japan Society of Applied Physics

14:30 〜 14:45

[E-1-04] Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast ID Measurement

T. Okunishi1, K. Hisada2, H. Toyoda3, Y. Yamamoto2, K. Arai2, Y. Yamashita2, K. Yamazaki1, S. Nara1 (1.Renesas Electronics Corp.(Japan), 2.Renesas Semiconductor Manufac. Co., Ltd.(Japan), 3.Renesas System Design Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.E-1-04