Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast I<sub>D</sub> Measurement

T. Okunishi

doi:https://doi.org/10.7567/SSDM.2016.E-1-04

14:30 〜 14:45

[E-1-04] Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast I_D Measurement

^○T. Okunishi¹, K. Hisada², H. Toyoda³, Y. Yamamoto², K. Arai², Y. Yamashita², K. Yamazaki¹, S. Nara¹ (1.Renesas Electronics Corp.(Japan), 2.Renesas Semiconductor Manufac. Co., Ltd.(Japan), 3.Renesas System Design Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.E-1-04

2016 International Conference on Solid State Devices and Materials

[E-1-04] Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast ID Measurement

[E-1-04] Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast I_D Measurement