14:45 〜 15:00

[E-1-05] Positive Bias Temperature Instability of SiC-MOSFETs Induced by Switching Operation (AC-PBTI)

^○E. Murakami¹, T. Furuichi¹, T. Takeshita¹, K. Oda¹ (1.Kyushu Sangyo Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.E-1-05