13:30 〜 14:00

[E-4-01(Invited)] Advanced 1.2 kV Class SiC MOSFETs Fabricated on 150 mm wafers in a High-volume CMOS Fab

^○S. Banerjee¹, K. Matocha¹, K. Chatty¹ (1.Monolith Semiconductor Inc.(USA))

https://doi.org/10.7567/SSDM.2016.E-4-01