10:30 〜 10:45

[F-3-04(Late News)] Fabrication and Performance of Pressure Sensor Device consisted of Electrets film and Organic Semiconductor

^○T. Kodzasa¹, D. Nobeshima¹, K. Kuribara¹, S. Uemura¹, M. Yoshida¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2016.F-3-04L