14:15 〜 14:30

[N-1-03] Demonstration of p-Channel HfO₂/GaSb MOSFETs by Using In-Situ Hydrogen Plasma Treatment

^○C. Ko¹, M. Tsai¹, C. Chien¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.N-1-03