Demonstration of a Common Gate-Stack Process for p-Ge and n-InGaAs CMOS Integration

P. Lee

doi:https://doi.org/10.7567/SSDM.2016.N-1-06

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 15:15

[N-1-06] Demonstration of a Common Gate-Stack Process for p-Ge and n-InGaAs CMOS Integration

P. Lee¹, C. Chen¹, S. Chang², G. Luo²,^○J. Chyi^1,3 (1.National Central Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Academia Sinica(Taiwan))

https://doi.org/10.7567/SSDM.2016.N-1-06

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