15:40 〜 16:10

[N-2-01(Invited)] GaN-based Polarized Semiconductor Devices for Future Power Switching Systems

^○H. Ishida¹, R. Kajitani¹, Y. Kinoshita¹, H. Umeda¹, S. Ujita¹, M. Ogawa¹, K. Tanaka¹, S. Tamura¹, M. Ishida¹, T. Ueda¹ (1.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.N-2-01