The Japan Society of Applied Physics

17:10 〜 17:25

[N-2-05] Evaluation of Schottky Barrier Height on 4H-SiC m-Face {1-100} for SBD-Wall Integrated Trench MOSFET (SWITCH-MOS)

Y. Kobayashi1,2, H. Ishimori1, A. Kinoshita2, T. Kojima1,2, M. Takei1,2, H. Kimura1,2, S. Harada1 (1.AIST(Japan), 2.Fuji Electric Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.N-2-05