Evaluation of Schottky Barrier Height on 4H-SiC m-Face {1-100} for SBD-Wall Integrated Trench MOSFET (SWITCH-MOS)

Y. Kobayashi

doi:https://doi.org/10.7567/SSDM.2016.N-2-05

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

17:10 〜 17:25

[N-2-05] Evaluation of Schottky Barrier Height on 4H-SiC m-Face {1-100} for SBD-Wall Integrated Trench MOSFET (SWITCH-MOS)

^○Y. Kobayashi^1,2, H. Ishimori¹, A. Kinoshita², T. Kojima^1,2, M. Takei^1,2, H. Kimura^1,2, S. Harada¹ (1.AIST(Japan), 2.Fuji Electric Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.N-2-05

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