9:30 AM - 10:00 AM

[N-3-01(Invited)] III-Nitride-based Negative Differential Resistance and Resonant Tunneling Devices With up to THz Operation Capability

^○D. Pavlidis¹ (1.Boston Univ.(USA))

https://doi.org/10.7567/SSDM.2016.N-3-01