High Performance Enhancement-mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess

C. H. Wu

doi:https://doi.org/10.7567/SSDM.2016.N-6-03

12:00 PM - 12:15 PM

[N-6-03] High Performance Enhancement-mode Al₂O₃/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess

C. H. Wu¹,^○P. C. Han¹, Q. H. Luc¹, S. C. Liu¹, Y. K. Lin¹, R. B. Lee¹, C. C. Huang¹, H. C. Wang¹, T. E. Hsieh¹, Y. C. Lin¹, E. Y. Chang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.N-6-03

2016 International Conference on Solid State Devices and Materials

[N-6-03] High Performance Enhancement-mode Al2O3/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess

[N-6-03] High Performance Enhancement-mode Al₂O₃/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess