12:15 〜 12:30

[N-6-04(Late News)] Normally-off Operation of Planar GaN MOS-HFET without using Etching Process

^○T. Nanjo¹, T. Hayashida¹, H. Koyama¹, A. Imai¹, A. Furukawa¹, M. Yamamuk¹ (1.Mitsubishi Electric Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.N-6-04L